On the basis of porous carbon, the reactive sintering silicon carbide ceramics were prepared by ihrigizing reaction. 以此为基础,进一步通过渗硅反应,制成反应烧结碳化硅陶瓷。
Silicon carbide space-borne mirror was produced by reaction bonded process. 采用反应烧结工艺制备了碳化硅空间用反射镜坯体。
Silicon carbide bar heating elements on both sides of the shaft furnace in the brick on the square. 硅碳棒加热元件系竖在炉膛两旁的方形砖上。
Study on Fabrication Technology of Reaction Bonded Silicon Carbide Mirror Blank for Space 空间用反应烧结碳化硅反射镜坯体制备技术研究
( trade mark) an abrasive composed of silicon carbide crystals. (商标)由金刚砂晶体构成的研磨剂。
Preparation and Photoluminescence Properties of Silicon Carbide Films SiC薄膜的制备和发光特性的研究
Other materials affected by Tuesday's ruling include fluorspar, magnesium, manganese, silicon carbide, silicon metal and yellow phosphorus. 受周二裁定影响的其他原材料还有萤石、镁、锰、碳化硅、金属硅和黄磷。
The effect of silicon carbide particle distribution on extrusion paste's rheological property and green bodies'density were investigated by changing the volume fraction of different particles. 通过改变物料组分中碳化硅粉料颗粒度分布范围以及改变粒度的含量,研究了其对物料挤压成型流变性能以及挤出坯体密度的影响。
The toughest materials around are diamond ( a type of crystalline carbon) and silicon carbide. 其中最为坚固的当属金刚石(一种碳的晶体)和碳化硅。
Preparation of silicon carbide whisker/ alumina composite ceramic powder from kaolinite/ polystyrene intercalation compound by carbothermal reducing reaction 高岭石/聚苯乙烯插层复合物碳热还原反应制备碳化硅晶须/氧化铝复相陶瓷粉体氮化硅低温转化合成碳化硅晶须研究
Standard silicon carbide seals provide high resistance to abrasion and corrosion over a wide range of temperature extremes. 标准金刚砂密封,在高温或低温状态下,仍然具有强大的耐磨损和耐腐蚀能力。
Strengthening of silicon carbide whiskers and particle dispersion were both used to improve the performances of alumina ceramic. 运用品须补强和粒子弥散双重手段,对氧化铝材料的性能进行改进。
Synthesis of Silicon Carbide Nanowires Using Thermal Decomposition of Organic Solvent and Research of Their Several Properties 有机溶剂热分解法碳化硅纳米电缆合成与性能研究
COMPACTGRAIN is available in aluminum oxide and silicon carbide grain, and it can be produced in belt and disc forms. COMPACTGRAIN由氧化铝和碳化硅颗粒制成,也可以生产成砂带和磨盘的形式。
It combines silicon carbide in the surface for initial slip resistance and aluminium trioxide throughout the thickness. 它结合了碳化硅在表面初始滑移阻力和三氧化二铝的整个厚度。
Refractory in the silicon carbide, clayey SiC has the most simple production process and the lowest price. 在碳化硅质耐火材料中,粘土结合碳化硅是生产工艺最简单、价格最低的制品。
Sialon bonded silicon carbide bricks, characterized by good resistance to oxidation and alkali corrosion, are mainly used on the underside, belly and bosh of blast furnace. 赛隆结合碳化硅砖具有优质的抗氧化和抗碱侵蚀性,主要用于炼铁高炉的路身下部、炉腰和炉腹等部位。
Carbon nanotubes ( CNTs) and silicon carbide whiskers ( SiCw) are promising reinforcement materials for manufacturing metal or ceramic based composites. 在制备复合材料中,碳纳米管和碳化硅晶须易受到空气和基体材料侵蚀而失效。
The former general with corundum and silicon carbide abrasive, while the latter such as diamond and cubic boron nitride superabrasive made. 前者用刚玉和碳化硅等普通磨料,后者用金刚石和立方氮化硼等超硬磨料制成。此外,还有一些特殊品种,如烧结刚玉磨具等。
The effects of hydrogen annealing on silicon carbide films grown on Si ( 111) substrates by radio frequency magnetron sputtering at room temperature are investigated. 用射频磁控溅射法在常温硅衬底上制备了碳化硅薄膜并研究了氢退火对薄膜的影响。
Silicon carbide was a strong covalent bond compound, which had favorable high temperature, electricity, mechanism and chemistry capability. 碳化硅材料是共价键极强的化合物,具有良好的高温性能、电性能、机械性能和化学性能。
Surface Coating of Silicon Carbide Material for Aerospace Optical Application 碳化硅空间光学材料的表面改性研究
Effect of Silicon Carbide Powder on Preparation of C_f/ SiC Composites by Molten Silicon Infiltration 碳化硅粉体对熔融渗硅法制备Cf/SiC复合材料结构的影响
Mechanism and Influencing Factors on Surface Roughness of Ultra-smooth Polishing of Chemical Vapor Deposition Silicon Carbide 化学气相沉积碳化硅超光滑抛光机理与表面粗糙度影响因素
Influences of Catalyst Amount in Xerogels Precursors on the Structure and Property of Silicon Carbide 前驱体凝胶中催化剂含量对碳化硅结构和性能的影响
Effects of Silicon Carbide on the Cure Depth, Hardness and Compressive Strength of Composite Resin 碳化硅对复合树脂固化深度、硬度和压缩强度的影响
Our main products are Silicon Carbide, Alumina Ceramic, Tungsten Carbide, and Carbon-Graphite Seal Rings. 我们的主要产品是碳化硅、质合金、石墨密封环和氧化铝陶瓷制品。
The synthesis of silicon carbide whiskers by double-heating method using carbon black and SiO_2 powder as raw materials is studied. 以炭黑和二氧化硅微粉为原料,对双重加热法合成碳化硅晶须进行了研究。
In this paper, decarbonization of silicon carbide platelets by using a novel rolling oxidation furnace was studied. 采用旋转式氧化脱炭炉这一新设备对碳化硅晶片的氧化脱炭进行了研究。
The fine grains, crack deflexion and grain-bridging are main toughening mechanisms of silicon carbide ceramic. 细晶、裂纹偏转和晶粒桥联是碳化硅陶瓷的主要增韧机制。